 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications * * * Enhancement mode type High speed: tf = 0.40 s (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current @Tc = 100C @Tc = 25C Symbol VCES VGES IC ICP Rating 600 20 33 80 160 80 PC 200 3.5 Tj Tstg 150 -55~150 0.8 C C N*m W A Unit V V A Pulsed collector current (Note 1) @Tc = 100C Collector power dissipation Junction temperature Storage temperature Screw torque @Tc = 25C @Ta = 25C JEDEC JEITA TOSHIBA ? ? 2-21F2C Weight: 9.75 g (typ.) Note 1: The Maximum rating of ICP=160A is limited by pulse (1ms). Refer to the graph of safe operating area for the detail. Thermal Characteristics Characteristics Thermal resistance , junction to case Symbol Rating Unit (Tc = 25C) Thermal resistance , junction to air Rth (j-c) 0.625 C/W (Ta = 25C) Rth (j-a) 35.7 C/W MARKING Part No. (or abbreviation code) TOSHIBA 80J101B Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-06-05 GT80J101B Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time tf (Note 2) toff 0.7 Symbol IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2) Cies tr ton Test Condition VGE = 25 V, VCE = 0 VCE = 600 V, VGE = 0 VCE = 5 V, IC = 80 mA IC = 10 A, VGE = 15 V IC = 80 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive load VCC = 300 V, I C = 80 A VGG = 15 V, RG = 33 Min 3.0 Typ. 2.4 5500 0.3 0.5 0.25 Max 500 1.0 6.0 2.0 2.9 pF Unit nA mA V V 0.40 s Note 2: Switching time measurement circuit and input/output waveforms. VGE 90% 0 RG RL 0 VCC 0 VCE td (off) tf t off tr t on IC 90% 10% 10% 90% 10% Caution on handling This device is MOS gate type. Therefore, please care about ESD when use. 2 2006-06-05 GT80J101B IC - VCE 100 8 Tc = 25 C 10 VCE - VGE Collector-emitter voltage VCE (V) Common emitter Common emitter Tc = -40C 8 10 20 6 40 4 60 I C = 80 A 15 20 10 Collector current IC (A) 80 60 6 40 20 5 VGE = 4 V 2 0 0 2 4 6 8 10 0 0 4 8 12 16 20 24 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 10 10 Tc = 25C 8 10 6 20 40 4 60 I C = 80 A VCE - VGE Collector-emitter voltage VCE (V) Common emitter Common emitter Tc = 125C 8 10 6 20 40 4 60 I C = 80 A Collector-emitter voltage VCE (V) 2 2 0 0 4 8 12 16 20 24 0 0 4 8 12 16 20 24 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 100 Common emitter VCE = 5 V 4 Common emitter VGE = 15 V 3 VCE (sat) - Tc Collector current IC (A) 80 Collector-emitter saturation voltage VCE (sat) (V) 60 80 2 50 30 I C = 10 A 40 20 Tc = 125C 25 -40 1 0 0 2 4 6 8 10 12 0 -40 0 40 80 120 160 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2006-06-05 GT80J101B VCE, VGE - QG Collector-emitter voltage VCE (V) (x10 V) Gate-emitter voltage VGE (V) 20 Common emitter 16 R L = 1.88 Tc = 25C 5 3 10 Switching time - RG Common emitter VCC = 300 V I C = 80 A VGG = 15 V Tc = 25C t off t on 12 VCE = 150 V 8 100 50 Switching time (s) 1 tr tf 0.5 0.3 4 0 0 80 160 240 320 0.1 3 5 10 30 50 100 300 500 Gate charge QG (nC) Gate resistance R () G Switching time - IC 5 Common emitter 3 VCC = 300 V R G = 33 10000 30000 C - VCE Switching time (s) Capacitance C (pF) VGG = 15 V Tc = 25C 1 5000 3000 C ies 0.5 0.3 t off 1000 500 300 Common emitter VGE = 0 V f = 1 MHz C oes t on tf tr 10 20 30 40 50 60 70 80 0.1 0 100 50 1 Tc = 25C 3 5 10 30 50 C res 100 300 500 Collector current I (A) C Collector-emitter voltage VCE (V) Safe Operating Area * Single non-repetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. Collector current IC (A) 200 Rth (t) - tw Transient thermal impedance Rth (t) (C/W) 1 s * 10 s * 100 s * 2 10 1 10 0 10 1 10- 2 10- 3 10- 5 10- Tc = 25 C I C max 100 (Pulsed) I C max (Continuous ) DC Operation 30 10 3 10 ms * 1 ms * 1 1 3 10 30 100 300 1000 4 10- 3 10- 2 10- 1 10- 0 10 1 10 2 10 Collector-emitter voltage VCE (V) Pulse width t w (s) 4 2006-06-05 GT80J101B Reverse Bias SOA 300 100 Collector current IC (A) 30 10 3 1 0.3 0.1 0 < Tj = 125C VGE = +15 V -0 R G = 33 100 200 300 400 500 600 700 Collector-emitter voltage VCE (V) 5 2006-06-05 GT80J101B RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or " spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2006-06-05 |
Price & Availability of GT80J101B
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |